Part Number Hot Search : 
S1036 1N6082 HC55T3R ADP1148 SF165A ADP5585 KTC4520F 00309
Product Description
Full Text Search

KMM53616004CK - 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4

KMM53616004CK_4372693.PDF Datasheet


 Full text search : 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4


 Related Part Number
PART Description Maker
KMM53616004CK KMM53616004CKG 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
HSD16M32M4V-F10L HSD16M32M4V-F12 HSD16M32M4V-F13 H Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) 72-Pin SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V
HANBIT[Hanbit Electronics Co.,Ltd]
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
SIEMENS AG
Infineon Technologies AG
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
Micron Technology, Inc.
K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163L 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
KMM372V3280BS1 KMM372V3200BS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
Samsung Electronic
SAMSUNG[Samsung semiconductor]
HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
SIEMENS AG
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
Elpida Memory
KMM372C1600BK 16M x 72 DRAM DIMM(16M x 72 动RAM模块)
SAMSUNG SEMICONDUCTOR CO. LTD.
 
 Related keyword From Full Text Search System
KMM53616004CK type KMM53616004CK display KMM53616004CK crystal KMM53616004CK C代码 KMM53616004CK ascel
KMM53616004CK astable multivibrators KMM53616004CK quad KMM53616004CK download KMM53616004CK Channel KMM53616004CK isa bus
 

 

Price & Availability of KMM53616004CK

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.3610379695892